Sunday, November 24, 2013

Qualcomm samples soon LTE modem at 20 nm - Elektroniktidningen

The new modem has two parts, the baseband Gobi 9×35 which will be manufactured in 20 nm. In addition to LTE-Advanced, Category 6, it enables among other DC-HSPA, EVDO REV. B, CDMA 1x, GSM and TD-SCDMA.

Modem also includes transceiverkretsen WTR3925 running in a 28 nm process. It is Qualcomm’s first enkretslösning which passes all frequency bands used for so-called carrieraggregation where operators can use the scattered bands as if they were a single coherent. In modem solution also includes frontendkretsen RF360.

Qualcomm is totally dominant in the LTE modem and the new product is the fourth generation. The new circuits Gobi 9×35 and WTR3925 to start sampling early next year.

The company along with including Intel one of Ericsson’s main opponent for the new business Modems. Ericsson has high ambitions and aims to become one of the big three on LTE modem within two years.

Learn Electronics magazine’s recent interview with Mats Norin (link) who manage the business.

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